Femtosecond laser direct writing of microholes on roughened ZnO for output power enhancement of InGaN light-emitting diodes
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Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers: Applied Physics Letters: Vol 99, No 17
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a) Basic LED structure (b) schematic InGaN/GaN MQW structure revealing... | Download Scientific Diagram
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Figure 8 | Temperature dependence of current–voltage and carrier lifetime characteristics in InGaN blue light-emitting diode | SpringerLink
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Frontiers | Experimental and Modeling Investigations of Miniaturization in InGaN/GaN Light-Emitting Diodes and Performance Enhancement by Micro-Wall Architecture | Chemistry
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Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density | Nanoscale Research Letters | Full Text
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Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN - ScienceDirect
Disruptive Substrate Technology for Direct Green and Red Micro LEDs_News_Compound semiconductor wafer
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High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel | Scientific Reports
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Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer | Scientific Reports
560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates
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